My Work

Chalcogenide Topological Insulators, Chapter 10 in Chalcogenide: From 3D to 2D and Beyond (Woodhead Publishing, 2020)

• Describes the synthesis, fabrication, and magnetic, electronic, and optical characterization of chalcogenide topological insulator materials.

• Highlights newly discovered physical and quantum phenomena and the opportunities for novel functionalities and technologies.

Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures, New J. Phys. 19, 085002 (2017).

• Discovered that magnetic topological insulator Bi2MnSe4 grows in a self-assembled multilayer heterostructure with layers of Bi2Se3.

• Provides a complete characterization of the growth dynamics and compositional, structural, and electronic properties of this exotic quantum material.

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization, Appl. Phys. Lett. 112, 043102 (2018).

• Developed a measurement technique to quantify dopant movement in the sub-nanometer regime to advance quantum device fabrication based on the deterministic placement of dopants in silicon.

• Provides detailed instruction for the determination of the conducting layer thickness of a Si:P delta-layer by means of a high-throughput, nondestructive electrical transport measurement.

Electron-electron interactions in low-dimensional Si:P delta layers, Phys. Rev. B 101, 245419 (2020).

• Presents how details of material synthesis affect the dimensionality of charge carrier interactions in embedded highly doped Si:P delta layers.

• Establishes the relationship between the confinement of Si:P delta layers and electron-electron interaction screening lengths.

• These results validate important models used for device simulation and design, allowing for improved engineering of Si:P single atom transistors and quantum devices.